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| PD-93946A IRFP460P l l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder Plated for Reflowing HEXFET(R) Power MOSFET D VDSS = 500V RDS(on) = 0.27 G S Description Third Generation HEXFET(R)s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. The solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. ID = 20A TO-247AC Max. 20 13 80 280 2.2 20 960 20 28 3.5 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) 230 (Time above 183 C should not exceed 100s) Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Maximum Reflow Temperature Units A W W/C V mJ A mJ V/ns C C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 0.45 --- 40 Units C/W www.irf.com 1 01/17/01 IRFP460P Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 500 --- --- 2.0 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.63 --- --- --- --- --- --- --- --- --- --- 18 59 110 58 5.0 13 4200 870 350 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.27 VGS = 10V, ID = 12A 4.0 V VDS = V GS, ID = 250A --- S VDS = 50V, ID =12A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS =-20V 210 ID = 20A 29 nC VDS = 400V 110 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 20A ns --- RG = 4.3 --- RD = 13,See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoverCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 20 showing the A G integral reverse --- --- 80 S p-n junction diode. --- --- 1.8 V TJ = 25C, IS = 20A, VGS = 0V --- 570 860 ns TJ = 25C, IF = 20A --- 5.7 8.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 20A, di/dt 160A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L =4.8mH RG = 25, IAS = 20A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFP460P Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP460P Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP460P VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP460P 1 5V VDS L D R IV E R RG 20V tp D .U .T IA S + V - DD A 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 10 V QGS VG QG 50K 12V .2F .3F QGD D.U.T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFP460P Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R)s www.irf.com 7 IRFP460P Package Outline TO-247AC Dimensions are shown in millimeters (inches) 15.90 (.6 26) 15.30 (.6 02) -B3.65 (.143 ) 3.55 (.140 ) 0.25 (.01 0) M -A5.50 (.21 7) 2 0.30 (.80 0) 1 9.70 (.77 5) 1 2 3 -C1 4.80 (.583 ) 1 4.20 (.559 ) 4 .30 (.170 ) 3 .70 (.145 ) L E A D A S S IG N M E N T S 1 2 3 4 GATE D R A IN SOURCE D R A IN -DDBM 5.3 0 (.20 9) 4.7 0 (.18 5) 2 .50 (.089) 1 .50 (.059) 4 2X 5.50 (.2 17) 4.50 (.1 77) NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7 -A C . 2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X 1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M 3.4 0 (.1 33) 3.0 0 (.1 18) C AS 0 .80 (.031) 3X 0 .40 (.016) 2.60 (.10 2) 2.20 (.08 7) Part Marking Information TO-247AC E X A M P L E : T H IS IS A N IR F P E 30 W IT H A S S E M B L Y LOT COD E 3A1Q A I N T E R N A T IO N A L R E C T IF IE R LOGO P AR T N UM B E R IR F P E 3 0 3A1Q 9302 DATE CO DE (Y Y W W ) YY = YE A R W W W EEK ASSEMBLY LOT COD E Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 8 www.irf.com |
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